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Goford Semiconductor
Since its establishment in 1995, Goford Semiconductor has evolved into a global enterprise with offices in the United States, Australia, Shenzhen, Jiangsu, and Hong Kong. The company has consistently dedicated itself to the research, development, and sales of power MOSFET products. Emphasizing energy efficiency, mobility, and reliability, we deliver cost-effective solutions to the market. We are committed to meeting customer needs, providing highly reliable and economical products, driving daily innovation and improvement, collaborating with engineers and customers for mutual value, and striving tirelessly to fulfill our promises.
Since its establishment in 1995, Goford Semiconductor has evolved into a global enterprise with offices in the United States, Australia, Shenzhen, Jiangsu, and Hong Kong. The company has consistently dedicated itself to the research, development, and sales of power MOSFET products. Emphasizing energy efficiency, mobility, and reliability, we deliver cost-effective solutions to the market. We are committed to meeting customer needs, providing highly reliable and economical products, driving daily innovation and improvement, collaborating with engineers and customers for mutual value, and striving tirelessly to fulfill our promises.
Goford Semiconductor Advantage Hot selling Products
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MOSFET N-CH ESD 150V 6A TO-252
Quantity
6600
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MOSFET P-CH 30V 85A TO-252
Quantity
11600
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MOSFET P-CH 60V 60A TO-252
Quantity
6600
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MOSFET P-CH 100V 35A TO-252
Quantity
4100
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MOSFET P-CH ESD 150V 12A TO-252
Quantity
4100
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N40V,150A,RD<1.5M@10V,VTH1.0V~2.
Quantity
3600
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P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Quantity
9840
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P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Quantity
5116
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P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Quantity
3320
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N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Quantity
10442
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N650V,RD(MAX)<360M@10V,VTH2.5V~4
Quantity
3810
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N100V,RD(MAX)<53M@10V,RD(MAX)<63
Quantity
3459
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N200V,RD(MAX)<650M@10V,VTH1V~3V,
Quantity
1600
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N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Quantity
6467
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P100V,RD(MAX)<200M@-10V,RD(MAX)<
Quantity
1600
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N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Quantity
4010
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N100V,RD(MAX)<240M@10V,VTH1.2V~3
Quantity
6178
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N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Quantity
6083
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P40V,RD(MAX)<39M@-10V,RD(MAX)<70
Quantity
5867
Describe
N200V,RD(MAX)<280M@10V,VTH1V~3V,
Quantity
3927