GT1K2P15D5
Goford Semiconductor
AS2312
Part Number：
AS2312
Category：
Single FETs, MOSFETs
Manufacturer：
ANBON SEMICONDUCTOR (INT'L) LIMITED
Description：
N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-236-3, SC-59, SOT-23-3
- Operating Temperature 150°C (TJ)
- Vgs (Max) ±10V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
- Power Dissipation (Max) 1.2W (Ta)
- Supplier Device Package SOT-23
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs 18mOhm @ 6.8A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 11.05 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 888 pF @ 10 V
