GT1K2P15D5
Goford Semiconductor
GT1K2P15D5
Part Number：
GT1K2P15D5
Category：
Single FETs, MOSFETs
Manufacturer：
Goford Semiconductor
Description：
MOSFET P-CH 150V 27A 130W 110M(M
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Vgs (Max) 20V
- Current - Continuous Drain (Id) @ 25°C 27A (Tc)
- Drain to Source Voltage (Vdss) 150 V
- Package / Case 8-PowerTDFN
- Power Dissipation (Max) 138W (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 15A, 10V
- Supplier Device Package 8-DFN (4.9x5.75)
- Input Capacitance (Ciss) (Max) @ Vds 3213 pF @ 75 V
