GT1K2P15D5
Goford Semiconductor
CC-C2-B15-0322
Part Number：
CC-C2-B15-0322
Category：
Single FETs, MOSFETs
Manufacturer：
CoolCAD
Description：
SiC Power MOSFET 1200V 12A
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Power Dissipation (Max) 100W (Tc)
- Current - Continuous Drain (Id) @ 25°C 12A (Ta)
- Operating Temperature -40°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) 1200 V
- Supplier Device Package TO-247
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Vgs(th) (Max) @ Id 3.2V @ 5mA
- Vgs (Max) +15V, -5V
- Rds On (Max) @ Id, Vgs 135mOhm @ 10A, 15V
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 200 V
