GT1K2P15D5
Goford Semiconductor
CDM22010-650 SL
Part Number：
CDM22010-650 SL
Category：
Single FETs, MOSFETs
Manufacturer：
Central Semiconductor Corp
Description：
MOSFET N-CH 650V 10A TO220
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220-3
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Drain to Source Voltage (Vdss) 650 V
- Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
- Vgs (Max) 30V
- Input Capacitance (Ciss) (Max) @ Vds 1168 pF @ 25 V
- Power Dissipation (Max) 2W (Ta), 156W (Tc)
