GT1K2P15D5
Goford Semiconductor
CGD65A130S2-T13
Part Number：
CGD65A130S2-T13
Category：
Single FETs, MOSFETs
Manufacturer：
Cambridge GaN Devices
Description：
650V GAN HEMT, 130MOHM, DFN8X8.
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- FET Type -
- FET Feature Current Sensing
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Technology GaNFET (Gallium Nitride)
- Rds On (Max) @ Id, Vgs 182mOhm @ 900mA, 12V
- Vgs(th) (Max) @ Id 4.2V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 12 V
- Vgs (Max) +20V, -1V
- Supplier Device Package 16-DFN (8x8)
- Package / Case 16-PowerVDFN
