GT1K2P15D5
Goford Semiconductor
CGD65B200S2-T13
Part Number：
CGD65B200S2-T13
Category：
Single FETs, MOSFETs
Manufacturer：
Cambridge GaN Devices
Description：
650V GAN HEMT, 200MOHM, DFN5X6.
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
- FET Type -
- Supplier Device Package 8-DFN (5x6)
- Package / Case 8-PowerVDFN
- FET Feature Current Sensing
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +20V, -1V
- Drive Voltage (Max Rds On, Min Rds On) 9V, 20V
- Rds On (Max) @ Id, Vgs 280mOhm @ 600mA, 12V
- Vgs(th) (Max) @ Id 4.2V @ 2.75mA
- Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 12 V
