GT1K2P15D5
Goford Semiconductor
DIW120SIC059-AQ
Part Number：
DIW120SIC059-AQ
Category：
Single FETs, MOSFETs
Manufacturer：
Diotec Semiconductor
Description：
MOSFET TO-247-3L N 65A 1200V
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-247-3
- Power Dissipation (Max) 278W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Supplier Device Package TO-247
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Rds On (Max) @ Id, Vgs 53mOhm @ 33A, 18V
- Vgs(th) (Max) @ Id 4V @ 9.5mA
- Gate Charge (Qg) (Max) @ Vgs 121 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 1000 V
