GT1K2P15D5
Goford Semiconductor
DMN1005UFDF-13
Part Number：
DMN1005UFDF-13
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
MOSFET BVDSS: 8V~24V U-DFN2020-6
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Drain to Source Voltage (Vdss) 12 V
- Power Dissipation (Max) 800mW (Ta)
- Package / Case 6-UDFN Exposed Pad
- Supplier Device Package U-DFN2020-6
- Current - Continuous Drain (Id) @ 25°C 14.1A (Ta)
- Rds On (Max) @ Id, Vgs 6mOhm @ 4A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 29.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 2014 pF @ 6 V
