GT1K2P15D5
Goford Semiconductor
DMN3011LFVWQ-13
Part Number：
DMN3011LFVWQ-13
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
MOSFET BVDSS: 25V~30V POWERDI333
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) 1.3W (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 58A (Tc)
- Vgs(th) (Max) @ Id 2.25V @ 250µA
- Package / Case 8-PowerVDFN
- Rds On (Max) @ Id, Vgs 11mOhm @ 30A, 10V
- Mounting Type Surface Mount, Wettable Flank
- Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 15 V
- Gate Charge (Qg) (Max) @ Vgs 19.7 nC @ 10 V
- Supplier Device Package PowerDI3333-8 (SWP) Type UX
