GT1K2P15D5
Goford Semiconductor
DMT8003SPSW-13
Part Number：
DMT8003SPSW-13
Category：
Single FETs, MOSFETs
Manufacturer：
Diodes Incorporated
Description：
MOSFET BVDSS: 61V~100V POWERDI50
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V
- Package / Case 8-PowerTDFN
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 30A, 10V
- Mounting Type Surface Mount, Wettable Flank
- Power Dissipation (Max) 3.1W
- Supplier Device Package PowerDI5060-8 (Type UX)
- Input Capacitance (Ciss) (Max) @ Vds 9081 pF @ 40 V
