GT1K2P15D5
Goford Semiconductor
EPC2219
Part Number：
EPC2219
Category：
Single FETs, MOSFETs
Manufacturer：
EPC
Description：
TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
- Package / Case Die
- Supplier Device Package Die
- Drain to Source Voltage (Vdss) 65 V
- Vgs (Max) -
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Technology GaNFET (Gallium Nitride)
- Rds On (Max) @ Id, Vgs 3.3Ohm @ 59mA, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.064 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 32.5 V
