GT1K2P15D5
Goford Semiconductor
EPC2302ENGRT
Part Number：
EPC2302ENGRT
Category：
Single FETs, MOSFETs
Manufacturer：
EPC
Description：
TRANS GAN 100V DIE .0018OHM
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Drain to Source Voltage (Vdss) 100 V
- FET Feature -
- Grade -
- Qualification -
- Power Dissipation (Max) -
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Operating Temperature -40°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 23 nC @ 5 V
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Vgs(th) (Max) @ Id 2.5V @ 14mA
- Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 50 V
- Current - Continuous Drain (Id) @ 25°C 101A (Ta)
- Rds On (Max) @ Id, Vgs 1.8mOhm @ 50A, 5V
- Supplier Device Package 7-QFN (3x5)
- Package / Case 7-PowerWQFN
