GT1K2P15D5
Goford Semiconductor
FCP165N65S3R0
Part Number：
FCP165N65S3R0
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
FCP165N65S3R0 - POWER MOSFET, N-
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220-3
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Drain to Source Voltage (Vdss) 650 V
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
- Rds On (Max) @ Id, Vgs 165mOhm @ 9.5A, 10V
- Power Dissipation (Max) 154W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 440mA
