GT1K2P15D5
Goford Semiconductor
FDN338P-EV
Part Number：
FDN338P-EV
Category：
Single FETs, MOSFETs
Manufacturer：
EVVO
Description：
MOSFET P-CH 20V 1.6A SOT-23
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Power Dissipation (Max) 400mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
- Supplier Device Package SOT-23
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
- Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
