GT1K2P15D5
Goford Semiconductor
FF06010QA
Part Number：
FF06010QA
Category：
Single FETs, MOSFETs
Manufacturer：
fastSiC
Description：
SICFET N-CH 650V 169A TO-247-4L
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Mounting Type -
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 169A (Tc)
- Package / Case TO-247-4
- Supplier Device Package TO-247-4L
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +18V, -8V
- Power Dissipation (Max) 555W (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 60A, 18V
- Vgs(th) (Max) @ Id 2.5V @ 100mA
- Gate Charge (Qg) (Max) @ Vgs 315 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 7390 pF @ 400 V
