GT1K2P15D5
Goford Semiconductor
FF06320B
Part Number：
FF06320B
Category：
Single FETs, MOSFETs
Manufacturer：
fastSiC
Description：
SICFET N-CH 650V 8.6A PQFN5x6
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 41W (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 8.6A (Tc)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +18V, -8V
- Supplier Device Package 8-PQFN (5x6), Power56
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Package / Case 9-PowerTDFN
- Rds On (Max) @ Id, Vgs 420mOhm @ 2A, 18V
- Vgs(th) (Max) @ Id 1.6V @ 4mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 400 V
- Input Capacitance (Ciss) (Max) @ Vds 318 pF @ 400 V
