GT1K2P15D5
Goford Semiconductor
G3F45MT06K
Part Number：
G3F45MT06K
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
650V 40M TO-247-4 G3F SIC MOSFET
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 167W (Tc)
- Current - Continuous Drain (Id) @ 25°C 52A (Tc)
- Package / Case TO-247-4
- Technology SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package TO-247-4
- Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 400 V
- Vgs (Max) +22V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs(th) (Max) @ Id 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 18 V
- Rds On (Max) @ Id, Vgs 54mOhm @ 20A, 18V
