GT1K2P15D5
Goford Semiconductor
GP2T040A120H
Part Number：
GP2T040A120H
Category：
Single FETs, MOSFETs
Manufacturer：
SemiQ
Description：
SIC MOSFET 1200V 40M TO-247-4L
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 63A (Tc)
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs(th) (Max) @ Id 4V @ 10mA
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
- Supplier Device Package TO-247-4
- Gate Charge (Qg) (Max) @ Vgs 118 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 3192 pF @ 1000 V
- Power Dissipation (Max) 322W (Tc)
