GT1K2P15D5
Goford Semiconductor
H5N2521FN-E#T2
Part Number：
H5N2521FN-E#T2
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas Electronics Corporation
Description：
POWER FIELD-EFFECT TRANSISTOR
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C
- Drain to Source Voltage (Vdss) 250 V
- Package / Case TO-220-3 Full Pack
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Vgs (Max) ±30V
- Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 25 V
- Supplier Device Package TO-220FN
- Power Dissipation (Max) 20W (Ta)
- Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 10 V
