GT1K2P15D5
Goford Semiconductor
IPD023N03LF2SATMA1
Part Number：
IPD023N03LF2SATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
IPD023N03LF2SATMA1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 36 nC @ 4.5 V
- Power Dissipation (Max) 3W (Ta), 107W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 15 V
- Rds On (Max) @ Id, Vgs 2.35mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id 2.35V @ 60µA
- Supplier Device Package PG-TO252-3-34
- Current - Continuous Drain (Id) @ 25°C 30A (Ta), 137A (Tc)
