GT1K2P15D5
Goford Semiconductor
IRF60B217
Part Number：
IRF60B217
Category：
Single FETs, MOSFETs
Manufacturer：
International Rectifier
Description：
TRENCH 40<-<100V
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Supplier Device Package PG-TO220-3-1
- Power Dissipation (Max) 83W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2230 pF @ 25 V
- Vgs(th) (Max) @ Id 3.7V @ 50µA
- Rds On (Max) @ Id, Vgs 9mOhm @ 36A, 10V
