GT1K2P15D5
Goford Semiconductor
IRF710
Part Number：
IRF710
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 400V 2A TO220-3
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 36W (Tc)
- Drain to Source Voltage (Vdss) 400 V
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
