GT1K2P15D5
Goford Semiconductor
IRFB3256PBF
Part Number：
IRFB3256PBF
Category：
Single FETs, MOSFETs
Manufacturer：
International Rectifier
Description：
IRFB3256 - 12V-300V N-CHANNEL PO
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 60 V
- Power Dissipation (Max) 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 150µA
- Rds On (Max) @ Id, Vgs 3.4mOhm @ 75A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 48 V
