GT1K2P15D5
Goford Semiconductor
IRFU110
Part Number：
IRFU110
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
4.7A 100V 0.540 OHM N-CHANNEL
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 10V
- Power Dissipation (Max) 25W (Tc)
- Supplier Device Package TO-251AA
