GT1K2P15D5
Goford Semiconductor
ISP16DP10LMAXTSA1
Part Number：
ISP16DP10LMAXTSA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
ISP16DP10LMAXTSA1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Package / Case TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
- Supplier Device Package PG-SOT223-4-21
- Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
- Power Dissipation (Max) 1.8W (Ta), 5W (Tc)
- Vgs(th) (Max) @ Id 2V @ 1.037mA
- Current - Continuous Drain (Id) @ 25°C 2.3A (Ta), 3.9A (Tc)
- Rds On (Max) @ Id, Vgs 167mOhm @ 2.2A, 10V
