GT1K2P15D5
Goford Semiconductor
IXFN75N120SK
Part Number：
IXFN75N120SK
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
SIC AND MULTICHIP DISCRETE
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Chassis Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Power Dissipation (Max) -
- Operating Temperature -40°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Supplier Device Package SOT-227B
- Package / Case SOT-227-4, miniBLOC
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +15V, -4V
- Rds On (Max) @ Id, Vgs 27mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id 3.6V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs 158 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 4820 pF @ 1000 V
