GT1K2P15D5
Goford Semiconductor
IXTH2N150
Part Number：
IXTH2N150
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse Inc.
Description：
DISCMOSFET N-CH STD-HIVOLTAGE TO
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Package / Case TO-247-3
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Supplier Device Package TO-247 (IXTH)
- Power Dissipation (Max) 170W (Tc)
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 25 V
- Drain to Source Voltage (Vdss) 1500 V
- Rds On (Max) @ Id, Vgs 9.2Ohm @ 500mA, 10V
