GT1K2P15D5
Goford Semiconductor
MSC040SMA120SDT/R
Part Number：
MSC040SMA120SDT/R
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET SIC 1200 V 40 MOHM TO-263
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 68A (Tc)
- Supplier Device Package TO-268
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 338W (Tc)
- Vgs (Max) +23V, -10V
- Vgs(th) (Max) @ Id 2.7V @ 2mA
- Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
- Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Input Capacitance (Ciss) (Max) @ Vds 1962 pF @ 1000 V
