GT1K2P15D5
Goford Semiconductor
MSC080SMA330B4N
Part Number：
MSC080SMA330B4N
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET SIC 3300V 80 MOHM TO-247-
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 41A (Tc)
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247-4
- Vgs (Max) +23V, -10V
- Drain to Source Voltage (Vdss) 3300 V
- Rds On (Max) @ Id, Vgs 105mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id 2.97V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs 55 nC @ 20 V
- Power Dissipation (Max) 381W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3462 pF @ 2.4 kV
