GT1K2P15D5
Goford Semiconductor
MSC360SMA120SCT/R
Part Number：
MSC360SMA120SCT/R
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET SIC 1200 V 360 MOHM PSMT
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 71W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiC (Silicon Carbide Junction Transistor)
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
- Vgs (Max) +23V, -10V
- Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 20V
- Input Capacitance (Ciss) (Max) @ Vds 255 pF @ 1000 V
- Package / Case 16-PowerSOP Module
- Vgs(th) (Max) @ Id 3.14V @ 250µA
- Supplier Device Package 16-PSMT
