GT1K2P15D5
Goford Semiconductor
MXP120A250FW-GE3
Part Number：
MXP120A250FW-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
SILICON CARBIDE MOSFET
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Power Dissipation (Max) 56W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +22V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
- Supplier Device Package TO-247-3L
- Rds On (Max) @ Id, Vgs 313mOhm @ 4A, 20V
- Vgs(th) (Max) @ Id 3.1V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs 20.3 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 447 pF @ 800 V
