GT1K2P15D5
Goford Semiconductor
NC1M120C12HTNG
Part Number：
NC1M120C12HTNG
Category：
Single FETs, MOSFETs
Manufacturer：
NovuSem
Description：
SiC MOSFET N 1200V 12mohm 214A
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Rds On (Max) @ Id, Vgs 20mOhm @ 100A, 20V
- Vgs (Max) +20V, -5V
- Current - Continuous Drain (Id) @ 25°C 214A (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 40mA
- Input Capacitance (Ciss) (Max) @ Vds 8330 pF @ 1000 V
- Power Dissipation (Max) 938W (Ta)
