GT1K2P15D5
Goford Semiconductor
NC1M120C35HTNG
Part Number：
NC1M120C35HTNG
Category：
Single FETs, MOSFETs
Manufacturer：
NextGen Components
Description：
SIC MOSFET 1200V 35M 75A TO247-
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Operating Temperature -55°C ~ 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Package / Case TO-247-4
- Supplier Device Package TO-247-4L
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1.2 kV
- Vgs (Max) +18V, -5V
- Rds On (Max) @ Id, Vgs 50mOhm @ 33.3A, 18V
- Vgs(th) (Max) @ Id 4.5V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs 190 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2834 pF @ 1 kV
- Power Dissipation (Max) 386W (Ta)
