GT1K2P15D5
Goford Semiconductor
NC1M120C75RRNG
Part Number：
NC1M120C75RRNG
Category：
Single FETs, MOSFETs
Manufacturer：
NovuSem
Description：
SiC MOSFET N 1200V 75mohm 46A 7
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 46A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package TO-263-7L
- Vgs (Max) +18V, -5V
- Vgs(th) (Max) @ Id 2.3V @ 5mA
- Rds On (Max) @ Id, Vgs 75mOhm @ 20A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 1402 pF @ 1000 V
- Power Dissipation (Max) 240W (Ta)
- Package / Case TO-263-8, DPak (7 Leads + Tab)
