GT1K2P15D5
Goford Semiconductor
NDS356AP-NB8L005A
Part Number：
NDS356AP-NB8L005A
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
-30V P-CHANNEL LOGIC LEVEL ENHAN
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3
- FET Type P-Channel
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Power Dissipation (Max) 500mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
- Drain to Source Voltage (Vdss) 30 V
- Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 10V
- Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 10 V
