GT1K2P15D5
Goford Semiconductor
NP60N06PDK-E1-AY
Part Number：
NP60N06PDK-E1-AY
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas Electronics Corporation
Description：
MOSFET TRANSISTOR MORE 1 W
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
- Supplier Device Package TO-263-3
- Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V
- Current - Continuous Drain (Id) @ 25°C 60A
- Power Dissipation (Max) 105W
