GT1K2P15D5
Goford Semiconductor
NTMYS1D3N04CTWG
Part Number：
NTMYS1D3N04CTWG
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
POWER MOSFET, SINGLE N-CHANNEL,
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4855 pF @ 25 V
- Package / Case SOT-1023, 4-LFPAK
- Rds On (Max) @ Id, Vgs 1.15mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 180µA
- Current - Continuous Drain (Id) @ 25°C 43A (Ta), 252A (Tc)
- Power Dissipation (Max) 3.9W (Ta), 134W (Tc)
- Supplier Device Package LFPAK4 (5x6)
