GT1K2P15D5
Goford Semiconductor
P3M06060T3
Part Number：
P3M06060T3
Category：
Single FETs, MOSFETs
Manufacturer：
PN Junction Semiconductor
Description：
SICFET N-CH 650V 46A TO220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-220-2
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package TO-220-2L
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Current - Continuous Drain (Id) @ 25°C 46A
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 170W
- Vgs (Max) +20V, -8V
- Rds On (Max) @ Id, Vgs 79mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id 2.2V @ 20mA (Typ)
