GT1K2P15D5
Goford Semiconductor
P3M173K0T3
Part Number：
P3M173K0T3
Category：
Single FETs, MOSFETs
Manufacturer：
PN Junction Semiconductor
Description：
SICFET N-CH 1700V 4A TO-220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-2
- Current - Continuous Drain (Id) @ 25°C 4A
- Supplier Device Package TO-220-2L
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Vgs (Max) +19V, -8V
- Power Dissipation (Max) 75W
- Rds On (Max) @ Id, Vgs 2.6Ohm @ 600mA, 15V
- Vgs(th) (Max) @ Id 2.2V @ 600µA (Typ)
