GT1K2P15D5
Goford Semiconductor
PSMN1R2-80ASEJ
Part Number：
PSMN1R2-80ASEJ
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
N-CHANNEL, 80 V, 1.18 MOHM, MOSF
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V
- Drain to Source Voltage (Vdss) 80 V
- Power Dissipation (Max) 935W (Tc)
- Vgs(th) (Max) @ Id 3.6V @ 1mA
- Supplier Device Package CCPAK1212
- Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Current - Continuous Drain (Id) @ 25°C 375A (Ta)
- Rds On (Max) @ Id, Vgs 1.18mOhm @ 25A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 26187 pF @ 40 V
