GT1K2P15D5
Goford Semiconductor
PSMN8R5-100ESFQ
Part Number：
PSMN8R5-100ESFQ
Category：
Single FETs, MOSFETs
Manufacturer：
NXP Semiconductors
Description：
NEXPERIA PSMN8R5 - NEXTPOWER 100
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Supplier Device Package I2PAK
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Rds On (Max) @ Id, Vgs 8.8mOhm @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs 44.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3181 pF @ 50 V
- Current - Continuous Drain (Id) @ 25°C 97A (Ta)
- Power Dissipation (Max) 183W (Ta)
