GT1K2P15D5
Goford Semiconductor
QS1200SCM36
Part Number：
QS1200SCM36
Category：
Single FETs, MOSFETs
Manufacturer：
Quest Semi
Description：
1200V 36AMP SiC Mosfet
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Qualification -
- Grade Automotive
- Package / Case TO-247-3
- Operating Temperature -55°C ~ 175°C
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 2.8V
- Current - Continuous Drain (Id) @ 25°C 36A
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-TO247-3
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id 3.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 600 V
- Input Capacitance (Ciss) (Max) @ Vds 1001 pF @ 800 V
- Power Dissipation (Max) 198W
