GT1K2P15D5
Goford Semiconductor
QS120SCM80D2P
Part Number：
QS120SCM80D2P
Category：
Single FETs, MOSFETs
Manufacturer：
Quest Semi
Description：
1200V N-CHANNEL SIC MOSFET 80 M
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Power Dissipation (Max) 250W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Input Capacitance (Ciss) (Max) @ Vds 1001 pF @ 800 V
- Supplier Device Package D2PAK-7L
- Vgs(th) (Max) @ Id 3.8V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 20 V
