GT1K2P15D5
Goford Semiconductor
RD3L04BBKHRBTL
Part Number：
RD3L04BBKHRBTL
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 60V 40A, TO-252 (DPAK), POWE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
- Operating Temperature 175°C (TJ)
- Supplier Device Package TO-252
- Power Dissipation (Max) 53W (Tc)
- Rds On (Max) @ Id, Vgs 13.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 348µA
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 30 V
