GT1K2P15D5
Goford Semiconductor
RJK5026DPP-E0#T2
Part Number：
RJK5026DPP-E0#T2
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas
Description：
RJK5026DPP-E0#T2 - SILICON N CHA
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 500 V
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
- Operating Temperature 150°C
- Package / Case TO-220-3 Full Pack
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 6A (Ta)
- Supplier Device Package TO-220FP
- Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
- Power Dissipation (Max) 28.5W (Tc)
