GT1K2P15D5
Goford Semiconductor
SI2316BDS-T1-BE3
Part Number：
SI2316BDS-T1-BE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
N-CHANNEL 30-V (D-S) MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Supplier Device Package SOT-23-3 (TO-236)
- Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 15 V
- Rds On (Max) @ Id, Vgs 50mOhm @ 3.9A, 10V
- Power Dissipation (Max) 1.25W (Ta), 1.66W (Tc)
- Current - Continuous Drain (Id) @ 25°C 3.9A (Ta), 4.5A (Tc)
