GT1K2P15D5
Goford Semiconductor
SI2387DS-T1-GE3
Part Number：
SI2387DS-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Supplier Device Package SOT-23-3 (TO-236)
- Gate Charge (Qg) (Max) @ Vgs 10.2 nC @ 10 V
- Drain to Source Voltage (Vdss) 80 V
- Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
- Current - Continuous Drain (Id) @ 25°C 2.1A (Ta), 3A (Tc)
- Rds On (Max) @ Id, Vgs 164mOhm @ 2.1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 395 pF @ 40 V
