GT1K2P15D5
Goford Semiconductor
SI3129DV-T1-GE3
Part Number：
SI3129DV-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 80 V (D-S) MOSFET TSOP
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package 6-TSOP
- Drain to Source Voltage (Vdss) 80 V
- Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
- Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 5.4A (Tc)
- Rds On (Max) @ Id, Vgs 82.7mOhm @ 3.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 805 pF @ 40 V
