GT1K2P15D5
Goford Semiconductor
SI4153DY-T1-GE3
Part Number：
SI4153DY-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package 8-SOIC
- FET Type P-Channel
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Vgs (Max) ±25V
- Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 15 V
- Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
- Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
- Current - Continuous Drain (Id) @ 25°C 14.3A (Ta), 19.3A (Tc)
